14

Monolayer epitaxial growth of GaInAs ternary by MOMBE

Année:
1991
Langue:
english
Fichier:
PDF, 90 KB
english, 1991
21

GaN growth by compound source molecular beam epitaxy

Année:
2002
Langue:
english
Fichier:
PDF, 90 KB
english, 2002
26

Carbon-doped p-type (0001) plane AlGaN (Al = 6–55%) with high hole density

Année:
2012
Langue:
english
Fichier:
PDF, 349 KB
english, 2012